Vapor-phase deposition apparatus and vapor-phase deposition method

ABSTRACT

A vapor-phase deposition apparatus comprises a substrate-supporting unit for supporting a substrate, a heater for heating the substrate-supporting unit, and a gas-supplying unit for supplying gas for forming a thin film on the substrate supported by the substrate-supporting unit. The substrate-supporting unit includes a first member to be heated to a predetermined temperature by the heater, a second member for supporting a peripheral part of the substrate, and a support member for supporting the second member on the first member and located outside a periphery of the substrate.

This application is a Continuation of application Ser. No. 07/672,120,filed on Mar. 19, 1991, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a vapor-phase deposition apparatus anda vapor-phase deposition method, either designed for use in manufactureof semi-conductor devices or the like.

2. Description of the Related Art

Various vapor-phase deposition apparatuses are known which performsvapor-phase deposition to form semiconductor films or the like on acrystal substrate, thereby to manufacture semiconductor devices or thelike. A typical vapor-phase deposition apparatus comprises a base plate,a reaction vessel secured to the base plate in airtight fashion, a shaftpassing through the base plate into the vessel, a substrate holderlocated within the vessel and rotatably supported by the shaft, forholding a crystal substrate, and a heater located within the vessel, forheating the holder and a crystal substrate held by the holder.

The reaction vessel has a gas-inlet port in the top, and a gas-outletport in the bottom. Gases (e.g., feed gas, carrier gas, etc.) aresupplied into the vessel through the gas-inlet port. Any gas that isleft unreacted in the vessel is discharged through the gas-outlet port.

In operation, the heater heats the crystal substrate, which is held bythe holder, to a predetermined temperature. Then, feed gas (SiH₄, SiH₂Cl₂, SiHCl₃, SiCl₄, Si₂ H₆, or the like) are supplied into the reactionvessel through the gas-inlet port, along with carrier gas (H₂ or thelike).

In most cases, a device having a lamp, a high-frequency wave generator,or a electric resistor is utilized as a heater to heat the substrateheld by the holder to the predetermined temperature. Whatever heatingdevice is used, it is necessary to heat the substrate uniformly. To thisend, use can be made of a substrate holder having a recess in which tohold a crystal substrate, as is disclosed in Published UnexaminedJapanese Patent Application No. 61-215289 and No. 62-4315. Even ifheated while held by this holder, a substrate is heated more at itsperipheral part than at the center part since the peripheral partcontacts the holder. Consequently, it is very difficult to form acrystal film having a uniform thickness, on the substrate.

Recently, it is increasingly demanded that a substrate be used in itsentirety. In other words, it is desired that the peripheral part of asubstrate should not be cut and discarded, in order to save material.Hence, there is a great demand for a technique of forming a crystal filmhaving a uniform thickness on the substrate, and the difference intemperature between the peripheral part and center part of the substratecan no longer be ignored.

Moreover, once the substrate warps due to the difference in temperaturebetween the upper and lower surfaces of the substrate, the gap betweenthe substrate and the surface of the holder changes. This temperaturedistribution of the substrate and the change in the surface temperaturedistribution results in stress. The stress is great, in particularlywhen the substrate is made of single-crystal silicon. It causestransition of the single-crystal silicon, which is known as "slip." Theslip deteriorates the characteristics of the semiconductor devicesformed on the silicon substrate.

The slip is a phenomenon that crystal molecules glides along crystallattices and are deformed when the stress, caused by the non-uniformdistribution of surface temperature of the substrate heated to a hightemperature, increases above the yield point of the crystal substrate.As is known in the art, the higher the temperature of the crystalsubstrate, the lower the yield point of the substrate, and the higherthe probability of slip.

Also, the substrate must be cooled to a low temperature some time beforeit is placed on and removed from the holder. It would otherwise bedifficult to place the substrate on the holder, and to remove it fromthe holder.

As has been pointed out, in the conventional vapor-phase depositionapparatus, the peripheral part of a substrate, which contacts theholder, is more heated than the center part which does not contact theholder. The non-uniform temperature distribution of the substrateinevitably makes it difficult to form a crystal film having a uniformthickness, on the substrate. Further, once the substrate warps due tothe difference in temperature between the upper and lower surfaces ofthe substrate, the gap between the substrate and the surface of theholder changes, inevitably changing the surface temperature distributionof the substrate. The change of the surface temperature distributionresults in two problems. First, it is impossible to form a crystal filmhaving a uniform physical property such as carrier concentration.Second, the substrate has stress, which causes transition of thesingle-crystal silicon, such as slip, ultimately deteriorating thecharacteristics of the semiconductor devices formed on the siliconsubstrate. Moreover, the substrate must be cooled to a lower temperaturesome time before it is placed on and removed from the holder, in orderto facilitate the placing and removal of the substrate. Needless to say,the cooling of the substrate is a bar to enhancement of throughput ofthe vapor-phase deposition apparatus.

SUMMARY OF THE INVENTION

The object of the present invention is to provide a vapor-phasedeposition apparatus which can impart a uniform surface-temperaturedistribution to a crystal substrate, causing no transition such as slipin the substrate and, thus, making it possible to form semiconductordevices on the substrate which have good characteristics.

To achieve this object, according to the present invention, there areprovided various vapor-phase deposition apparatuses.

More specifically, according to a first aspect of the invention, thereis provided a vapor-phase deposition apparatus comprising:substrate-supporting means for supporting a substrate; heating means forheating the substrate-supporting means; and gas-supplying means forsupplying gas for forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises twomembers and a support member. The first member is heated to apredetermined temperature by the heating means. The second membersupports the peripheral part of the substrate, thus supporting thesubstrate. The support member supports the second member on the firstmember and is located outside a periphery of the substrate.

According to a second aspect of the invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means has acircular recess having a diameter greater than that of the substrate,and comprises a support member for supporting the peripheral part of thesubstrate.

According to a third aspect of this invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises twomembers. The first member is heated to a predetermined temperature bythe heating means and has a circular recess with a diameter greater thanthat of the substrate. The second member is supported by the firstmember and located above the circular recess, for supporting theperipheral part of the substrate.

According to a fourth aspect of this invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises twomembers. The first member is heated to a predetermined temperature bythe heating means. The second member is made of material having athermal conductivity less than that of the first member, and is providedon the first member, for supporting the peripheral part of thesubstrate.

According to a fifth aspect of this invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means has asubstrate-supporting member which is to be heated to a predeterminedtemperature by the heating means and which has a recess having a concavebottom having a radius of curvature substantially equal to the valuewhich the substrate will have when it is heated and warped, and beingspaced away from the substrate by a distance of at least 1 mm.

According to a sixth aspect of the invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and first gas-supplying means for supplyinga first gas for forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises asubstrate-supporting member and second gas-supplying means. Thesubstrate-supporting member is to be heated to a predeterminedtemperature by the heating means, has a recess defining a space with thesubstrate when the substrate is mounted on the substrate-supportingmember. The second gas-supplying means supplies a second gas into thespace defined by the substrate and the substrate-supporting member.

According to a seventh aspect of this invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises twomembers and one support member. The first member is heated to apredetermined temperature by the heating means. The second membersupports the peripheral part of the substrate. The support membersupports the second member such that the second member opposes the firstmember, spaced away from the first member.

According to an eighth aspect of this invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises twomembers. The first member is heated to a predetermined temperature bythe heating means. The second member is made of material havingemissibility substantially equal to that of the substrate, and supportsthe peripheral part of the substrate, thus supporting the substrate withrespect to the first member.

According to a ninth aspect of this invention, there is provided avapor-phase deposition apparatus comprising: substrate-supporting meansfor supporting a substrate; heating means for heating thesubstrate-supporting means; and gas-supplying means for supplying gasfor forming a thin film on the substrate supported by thesubstrate-supporting means. The substrate-supporting means comprises twomembers. The first member is heated to a predetermined temperature bythe heating means. The second member is made of material having a heatcapacity per unit area, which is substantially equal to that of thesubstrate, and supports the peripheral part of the substrate, therebysupporting the substrate with respect to the first member.

The most prominent problem with a typical vapor-phase depositionapparatus is the slip occurring in the substrate, due to thermal stressresulting from the non-uniform distribution of surface temperature ofthe substrate. The inventors hereof repeated experiments and analyzedthe results of the experiments, in order to ascertain the relationbetween the heat-transmission in and heat-radiation from substrates, onthe one hand, and the stress developed in the substrates, on the otherhand. Finally they discovered that the stress due to the temperaturedifference between the upper and lower surfaces of a substrate was notthe immediate cause of the slip in the substrate. Rather, as they found,the temperature distribution in the radial direction of the substratewas not uniform because the substrate warped due to the temperaturedifference, and this non-uniform surface-temperature distribution wasthe very cause of the slip.

Therefore, to prevent slip from occurring in a substrate, thetemperature difference between the surfaces of the substrate is notnecessarily reduced by heating both surfaces of the substrate byapplying lamp heating thereto, though it has hitherto been thoughtnecessary to reduce said temperature difference. To prevent slip, it issuffices to make the surface-temperature distribution uniform.

Hence, the inventors hereof invented various methods of rendering thesurface-temperature distribution uniform, no matter whether thesurface-temperature distribution is not uniform due to the warping ofthe substrate, the heat transmission by a member supporting thesubstrate, or any other cause.

Additional objects and advantages of the invention will be set forth inthe description which follows, and in part will be obvious from thedescription, or may be learned by practice of the invention. The objectsand advantages of the invention may be realized and obtained by means ofthe instrumentalities and combinations particularly pointed out in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate presently preferred embodiments ofthe invention, and together with the general description given above andthe detailed description of the preferred embodiments given below, serveto explain the principles of the invention.

FIG. 1 is a cross-sectional view illustrating a vapor-phase depositionapparatus according to a first embodiment of the invention;

FIG. 2 is an enlarged, cross-sectional view showing thesubstrate-supporting unit of the apparatus shown in FIG. 1 and asubstrate supported by the unit;

FIG. 3 is a graph representing the relation between the temperature T ofthe substrate and the distance d between the holder and the substrate;

FIG. 4 is an enlarged, cross-sectional view of a first modification ofthe substrate-supporting unit shown in FIG. 2;

FIG. 5 is an enlarged, cross-sectional view of a second modification ofthe substrate-supporting unit;

FIG. 6 is a vertical sectional view illustrating a vapor-phasedeposition apparatus according to a second embodiment of the presentinvention;

FIG. 7 is an enlarged, cross-sectional view of a third modification ofthe substrate-supporting unit;

FIGS. 8 and 9 are, respectively, an enlarged, cross-sectional view and aplan view of a fourth modification of the substrate-supporting unitshown in FIG. 2;

FIG. 10 is an enlarged, cross-sectional view of the substrate-supportingunit employed in a third embodiment of the invention;

FIG. 11 is an enlarged, cross-sectional view of a first modification ofthe substrate-supporting unit illustrated in FIG. 10;

FIG. 12 is an enlarged, cross-sectional view of a second modification ofthe substrate-supporting unit shown in FIG. 10;

FIG. 13 is an enlarged, cross-sectional view of a third modification ofthe substrate-supporting unit shown in FIG. 10;

FIG. 14 is an enlarged, cross-sectional view of a modification of thesubstrate-supporting unit shown in FIG. 7;

FIG. 15 is an enlarged, cross-sectional view of a modification of thesubstrate-supporting unit illustrated in FIG. 11;

FIG. 16 is an enlarged, cross-sectional view of a modification of thesubstrate-supporting unit shown in FIG. 14;

FIG. 17 is an enlarged, cross-sectional view of a modification of thesubstrate-supporting unit shown in FIG. 15;

FIG. 18 is an enlarged, cross-sectional view of a first modification ofthe substrate-supporting unit illustrated in FIG. 2;

FIG. 19 is an enlarged, cross-sectional view of a second modification ofthe substrate-supporting unit shown in FIG. 2;

FIG. 20 is a graph representing the relation between the total-sliplength L of a substrate and the temperature difference ΔT between thesubstrate and a portion of the supporting member, said relation beingone observed in the modifications illustrated in FIGS. 18 and 19;

FIG. 21 is a circuit diagram showing a device for independentlycontrolling the temperature of the center part of a substrate and thatof the peripheral part thereof;

FIG. 22 is a graph showing the relation between the total-slip length Lof a substrate and H2/H1, observed in the modifications illustrated inFIGS. 18 and 19, where H1 is the distance between the substrate holderand the substrate-supporting member, and H2 is the distance between thesubstrate and the substrate holder;

FIG. 23 is an enlarged, cross-sectional view showing another type of asubstrate-supporting unit according to the present invention;

FIG. 24 is an enlarged, cross-sectional view showing still another typeof a substrate-supporting unit according to the present invention;

FIG. 25 is an enlarged, cross-sectional view showing anothersubstrate-supporting unit according to the present invention;

FIG. 26 is an enlarged, cross-sectional view illustrating thesubstrate-supporting unit used in a fourth embodiment of the invention;

FIG. 27 is an enlarged, cross-sectional view showing a firstmodification of the substrate-supporting unit illustrated in FIG. 26;

FIG. 28 is a plan view showing a second modification of thesubstrate-supporting unit illustrated in FIG. 26;

FIG. 29 is an enlarged, cross-sectional view illustrating the substrateholder for use in a fifth embodiment of the present invention;

FIGS. 30A and 30B are enlarged, cross-sectional views showing anothertype of a substrate holder for use in the fifth embodiment;

FIG. 31 is an enlarged, cross-sectional view showing the substrateholder which is a modification of the holder illustrated in FIGS. 30Aand 30B;

FIGS. 32 to 34 are enlarged, cross-sectional views showing themodifications of the substrate holders illustrated FIGS. 29, 30A, 30B,and 31;

FIG. 35 is a vertical sectional view illustrating a vapor-phasedeposition apparatus according to a sixth embodiment of the invention;

FIG. 36 is a vertical sectional view showing a modification of the sixthembodiment of the invention;

FIG. 37 is a cross-sectional view schematically showing a modifiedreaction vessel;

FIGS. 38 and 39 are sectional views illustrating two other types ofvapor-phase deposition apparatuses, according to the present invention;

FIG. 40 is a sectional view showing another modifiedsubstrate-supporting unit; and

FIGS. 41 and 42 are schematic views of a vapor-phase depositionapparatus according to the invention, explaining how to transfer asubstrate into, and out of, the reaction vessel of the apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the invention will now be described with reference to theaccompanying drawings.

FIG. 1 illustrates a vapor-phase deposition apparatus according to afirst embodiment of the invention. As is shown in this figure, theapparatus comprises a base plate 1, a reaction vessel 2 secured to thebase plate 1 in airtight fashion, a disc-shaped substrate holder 4located within the vessel 2, for supporting a crystal substrate 3, avertical shaft 5 passing through the base plate 1 into the vessel 2, aheater 6 provided in the vessel 2, for heating both the substrate 3 andthe holder 4, a drive unit 8 located below the base plate 1, and agas-supplying unit 9 located outside the vessel 1. The upper end of theshaft 5 is detachably connected to the substrate holder 4, and the lowerend of the shaft 5 is connected to the drive unit 8.

As FIG. 1 shows, the reaction vessel 2 has a gas-inlet port 2a, and thebase plate 1 has a gas-outlet port 2b. The gas-supplying unit 9 iscoupled to the gas-inlet port 2a, for supplying a feed gas and a carriergas into the reaction vessel 2 through the gas-inlet port 2a. The gasesleft unreacted in the vessel 2 is discharged from the vessel 2 throughthe gas-outlet port 2b.

The heater 6, which is placed right below the substrate holder 4, heatsthe holder 4. The holder 4, thus heated, heats the substrate 3 to apredetermined temperature. The feed gas is applied to the heatedsubstrate 3 supplied through the port 2a, together with the carrier gassupplied also through the port 2a. As a result of this, vapor-phasedeposition takes place on the upper surface of the substrate 3, forminga thin semiconductor film thereon.

FIG. 2 is an enlarged, cross-sectional view showing the substrate 3 andthe substrate holder 4, both illustrated in FIG. 1. As is evident fromFIG. 2, three support posts 11 protrude upward from the peripheral edgeof the holder 4, and a substrate-supporting member 10 is supported bythe posts 11, with its peripheral edge contacting the support posts 11.The three posts 11 can be replaced by one support post, two supportposts, or four or more support posts. Alternatively, it can be replacedby a ring-shaped wall fixed to the peripheral edge of the holder 4.

The substrate-supporting member 10 has a center hole 10a having adiameter slightly less than that of the crystal substrate 3. The hole10a is defined by a stepped portion of the substrate-supporting member10. Only the peripheral part of the substrate 4 contacts this steppedportion, whereby the substrate 3 is supported by the member 10, and themember 10 is connected to the holder 4 by the thin support posts 11only. The member 10 and the posts 11 constitute long heat paths eachhaving a small cross-sectional area. Hence, the heat which istransmitted from the holder 4 to the peripheral part of the substrate 3through these heat paths is negligible, far less than the heat radiatedfrom the holder 4 to the substrate 3 and than the heat conducted fromthe holder 4 to the substrate 3 via the gas (i.e., the carrier gas H₂)existing in the gap between the substrate 3 and the holder 4.

Let us assume that the amount of heat radiated from the substrate 3 isequal to the amount of heat applied from the holder 4 to the substrate,by virtue of the law of conservation of heat. Then, the temperature T ofthe substrate 3 and the distance D between the substrate 3 and theholder 4 have the relationship shown in the graph of FIG. 3, providedthe temperature of the holder 4 is maintained at a fixed value by meansof the heater 6.

As can be understood from FIG. 3, the temperature of the substrate 3greatly changes with the distance D, as long as the distance D is equalto or less than 1 mm. When the distance D is greater than 1 mm, however,the temperature of the substrate 3 changes with the distance D, but notso much. It follows that the temperature of the substrate 3 will remainfairly uniform even if the substrate warps due to the temperaturedifference between the upper and lower surfaces of the substrate 3,provided that the distance D is set at more than 1 mm.

Hence, in the embodiment shown in FIG. 2, the substrate 3 is spacedapart from the holder 4 by a distance of 5 mm, and thesubstrate-supporting member 10 is spaced apart from the holder 4 by adistance of 4 mm. The substrate holder 4 is uniformly heated by theheater 6, and the substrate 3 is uniformly heated by virtue of the heatradiated from the holder 4 and the heat conducted therefrom through thecarrier gas existing in the gap between the substrate 3 and the holder4.

While the substrate 3 is heated, the drive unit 8 rotates the verticalshaft 5 at the speed of, for example, 10 rpm, thereby rotating theholder 4 and hence the substrate 3.

The substrate-supporting member 10 is heated, also by virtue of the heatradiated from the holder 4 and the heat conducted therefrom through thecarrier gas existing in the gap between the substrate 3 and the holder4. Scarcely is it heated by the heat conduction from the holder 4through the support posts 11. Hence, the member 10 is heated tosubstantially the same temperature as the crystal substrate 3, and theperipheral part of the substrate 3, which contacts the member 10, isheated neither more or less than any other part.

In the embodiment shown in FIG. 2, the holder 4, the member 10, andsupport posts 11 are separate components and assembled together,constituting a substrate-supporting unit. Instead, these components canbe formed integrally as is illustrated in FIG. 4, thus forming asubstrate-supporting unit. The unit has a disc-shaped hollow 20 whichhas a diameter greater than that of the crystal substrate 3. Due tothis, the heat path extending from the holder 4 to the substrate 3,formed of an annular portion 10 and a ring-shaped wall 11, is so longthat only a negligibly small amount of heat is conducted from the holder4 to the peripheral part of the substrate 3. Hence, the peripheral partof the substrate 3 is heated to substantially the same temperature asany other part.

FIG. 5 illustrates a substrate-supporting unit, which is a secondmodification of the unit shown in FIG. 2. As is evident from FIG. 5,this modification is characterized in that the substrate-supportingmember 10 has a thin portion 10a. Because of the thin portion 10a, eachof the heat paths has a reduced cross-sectional area and, hence,conducts less heat from the holder 4 to the substrate 3, than does eachheat path of the substrate-supporting unit illustrated in FIG. 2.

FIG. 6 is a vertical sectional view illustrating a vapor-phasedeposition apparatus which is a second embodiment of the invention. Thisapparatus is characterized in two respects. First, a heater coil 7,which is wound around the vessel 2, is used in place of a heater locatedwithin the vessel 2. Second, the substrate-supporting member 10 and thering-shaped wall 11 are made of material, such as glass or ceramics,which is hardly heated by the coil unlike the material of the holder 4which is used as susceptor. The peripheral part of the substrate 3,contacting the member 10, is therefore heated neither more or less thanany other part. As a result, heat is distributed uniformly in thesubstrate 3.

In the substrate-supporting units shown in FIGS. 4, 5, and 6, thering-shaped wall 11 can be replaced by, for example, three supportposts. In this case, the annular portion or the substrate-supportingmember 10 can be replaced by three components shaped like Japanese fan,secured to the three posts, respectively, and arranged in a circle.

FIG. 7 illustrates a third modification of the substrate-supporting unitshown in FIG. 2. As is evident from FIG. 7, the substrate-supportingunit is characterized in two respects. First, the holder 4 and thering-shaped wall 11 are integrally formed. Second, thesubstrate-supporting member 10 is made of material having a low thermalconductivity, such as glass or ceramics. Since the member 10 is made ofsuch material, only a negligibly small amount of heat is conducted fromthe holder 4 to the peripheral part of the substrate 3 through the wall11 and the member 10. Therefore, the heat distribution in the substrate3 is substantially uniform. The ring-shaped wall 11 can, of course, bemade of the same material as the member 10.

FIGS. 8 and 9 show a fourth modification of the substrate-supportingunit illustrated in FIG. 2, the former being an enlarged,cross-sectional view, and the latter being a plan view. Thismodification is identical to the unit shown in FIG. 2, except that threepointed protrusions 10c are formed on the stepped portion at the edge ofthe hole 10a of the member 10. Hence, the substrate 3 is set inthree-point contact with the substrate-supporting member 10. Thisreduces the cross-sectional area of the heat path extending from theholder 4 to the peripheral part of the substrate 3. Therefore, the heatdistribution in the substrate 3 is more uniform than in the case wherethe substrate 3 is supported by the unit of FIG. 2. Needless to say, thepointed protrusions 10c can be replaced by a thin annular wall 10c, inwhich case the substrate 3 is placed in line-contact with thesubstrate-supporting member 10.

FIG. 10 is an enlarged, cross-sectional view of the substrate-supportingunit employed in a third embodiment of the invention. As is shown inFIG. 10, the unit is made by forming a disc-shaped hollow 20 in adisc-shaped block 4. The unit has a center hole made in the top wall andhaving a diameter smaller than that of a crystal substrate 3. A steppedportion is formed at the edge of the center hole. The substrate isplaced on the annular top portion, i.e., the substrate-supportingportion 4a, with its peripheral part resting on the stepped portion.

FIG. 11 illustrates a first modification of the substrate-supportingunit illustrated in FIG. 10. This modified unit comprises a disc-shapedblock having a circular recess 20 and an annular substrate-supportingmember 10 secured to the top of the block, with its upper surface in thesame plane as the top of the block. The substrate-supporting member 10is made of material having a low thermal conductivity, such as glass orceramics. The member 10 has an inside diameter which is smaller thanthat of a substrate 3, and has a stepped portion at its inner edge. Thesubstrate 3 is supported by the member 10, with its peripheral partresting upon the stepped portion of the member 10.

FIG. 12 shows a second modification of the substrate-supporting unitshown in FIG. 10. This unit different from the unit of FIG. 10, only inthat the substrate-supporting portion 4a has a thin portion 4b. Becauseof the thin portion 4b, the heat path extending from the bottom portionto the peripheral part of the substrate 3 has a reduced cross-sectionalarea and, hence, conducts less heat than does the heat path of thesubstrate-supporting unit illustrated in FIG. 10.

FIG. 13 is an enlarged, cross-sectional view of a third modification ofthe substrate-supporting unit shown in FIG. 10. This modification isidentical to the unit of FIG. 10, except that an annular thin wall or aplurality of pointed protrusions 4c are integrally formed on the steppedportion. Hence, the substrate 3 is set in line-contact or point-contactwith the substrate-supporting member 10. This reduces thecross-sectional area of the heat path extending from the bottom portionto the peripheral part of the substrate 3. Therefore, the heatdistribution in the substrate 3 is more uniform than in the case wherethe substrate 3 is supported by the unit illustrated in FIG. 10.

FIG. 14 shows a modification of the substrate-supporting units of FIG.7, and FIG. 15 illustrates a modification of the substrate-supportingunit shown in FIGS. 10 and 11. As can be understood from FIGS. 14 and15, these substrate-supporting units are identical to the units of FIGS.7 and 11, except that the substrate-supporting member 10 is made of aspecific material as will be described later in detail.

Both units of FIGS. 14 and 15 have a disc-shaped hollow 20 which has adiameter greater than that of the crystal substrate 3. Due to this, theheat path extending from the bottom portion of the block 4 to theperipheral part of the substrate 3, formed of an annular wall 11 and thesubstrate-supporting member 10, is so long that only a negligibly smallamount of heat is conducted from the holder 4 to the peripheral part ofthe substrate 3. Hence, the peripheral part of the substrate 3 is heatedto substantially the same temperature as any other part.

The heat conducted to the substrate 3 through the heat path isnegligibly small, the substrate 3 is heated, virtually by only the heatradiated from the holder 4 and the heat conducted therefrom through thecarrier gas existing in the gap between the substrate 3 and the holder4.

Means, other than the long heat path, is used in the modified units ofFIGS. 14 and 15 in order to reduce, even more, the temperaturedifference between the center and peripheral parts of the substrate 3.More specifically, the substrate-supporting member 10 is made ofmaterial having emissibility which is substantially equal to that of thesubstrate 3, or has surface roughness which is substantially equal tothat of the substrate 3. As is known in the art, the emissibility of amember is inversely proportional to the surface roughness of the member.In other words, the less the surface roughness, the higher theemissibility; the greater the surface roughness, the lower theemissibility.

To be more specific, if the substrate is made of silicon, the member 10is made of the material having emissibility substantially equal to thatof silicon, or has a surface roughness substantially equal to that ofthe substrate 3. As a result of this, the substrate 3 and the member 10are heated to substantially the same temperature as the block 4 isheated by a heater 6 (not shown). There is but an extremely smalltemperature difference between the center and peripheral parts of thesubstrate 3. In other words, the substrate 3 has a uniformsurface-temperature distribution.

Alternatively, in order to impart a uniform surface-temperaturedistribution to the substrate, the substrate-supporting member 10 ismade of material having substantially the same heat capacity per unitarea as that of the substrate 3. In this instance, the substrate 3 hasvirtually no thermal stress, and hence the molecules of the substrateundergo virtually no slip. If the substrate-supporting member 10 had aheat capacity per unit area which is different from that of thesubstrate 3, the substrate 3 should have a non-uniformsurface-temperature distribution, and should inevitably have a thermalstress, which would cause slip or glide of the substrate molecules.

FIG. 16 shows a modification of the substrate-supporting unitillustrated in FIG. 14, and FIG. 17 shows a modification of thesubstrate-supporting unit shown in FIG. 15. The unit of FIG. 16 ischaracterized in that the annular wall 11 is made of material having lowthermal conductivity. The unit of FIG. 17 is characterized in that thesubstrate-supporting member 10 consists of two components 10d and 10e.The first component 10d is made of material which has the sameemissibility or the same heat capacity per unit area, as the substrate3, and the second component 10e is made of material which has loweremissibility or less heat capacity per unit area, than that of thesubstrate 3. Hence, the wall 11 or component 10e conducts less heat tothe peripheral part of the substrate 3 than in the unit illustrated inFIG. 14 or 15.

In the substrate-supporting units illustrated in FIGS. 14 to 17, it ismost desirable that the member 10, which needs to have the sameemissibility or the same heat capacity as the substrate 3, be made ofthe material identical to that of the substrate 3. Hence, if thesubstrate 3 is a silicon substrate, the member 10 should best be made ofsilicon. In other words, it suffices to support the substrate 4 by meansof an annular dummy substrate of the same material as the substrate 3,such that the peripheral part of the substrate 3 contacts the insideedge of the dummy substrate.

FIG. 18 shows a modification of the substrate-supporting unitillustrated in FIG. 2. Generally, in a vapor-phase deposition apparatus,the peripheral part of a substrate 3, which contacts an annularsubstrate-supporting member 10, is likely to be cooled due to thethermal resistance at the interface between the substrate 3 and themember 10. The substrate-supporting unit shown in FIG. 18 is designed toprevent the peripheral part from being cooled. More specifically, anannular wall 10f is formed integrally with a holder 4, protrude upwardstherefrom, and is located right below the inside edge of the annularmember 10. The inside edge of the member 10 is therefore heated morethan any other part of the member 10, because of the heat radiated fromthe top of the annular wall 10f. It follows that the peripheral part ofthe substrate 3, which is placed on the inside edge of the member 10, isheated to the same temperature as any other part of the substrate 3. Asa result, the substrate 10 has a surface-temperature distribution whichis sufficiently uniform.

FIG. 19 shows a second modification of the substrate-supporting unitillustrated in FIG. 2. This modification is also designed to prevent theperipheral part from being cooled. An annular wall 10g is integrallyformed with a substrate-supporting member 10, and protrudes downwardsfrom the inside edge of the member 10. The inside edge of the member 10is heated more than any other part of the member 10, because of the heatradiated from the holder 4 is readily applied to the lower end of theannular wall 10g. Hence, the peripheral part of the substrate 3, whichis placed on the inside edge of the member 10, is heated to the sametemperature as any other part of the substrate 3. As a result, thesubstrate 10 has a surface-temperature distribution which issufficiently uniform.

The inventors made several substrate-supporting units of the types shownin FIGS. 18 and 19, which had annular walls 10f and 10g having variousheights H1, and used them in a vapor-phase deposition apparatusavailable to the inventors, thus heating substrates. Then, they recordedthe temperatures to which the walls 10f and 10g were heated, against theheights of these annular walls. The results were as is shown in thegraph of FIG. 20, which is graph representing the relation between thetotal-slip length L of a substrate (plotted on the Y axis) and thedifference ΔT (plotted on the x axis) between the temperature (T1) ofthe substrate and the temperature (T2) of the annular wall 10f or 10g.

As is evident from FIG. 20, when the temperature difference ΔT is lessthan 10° C., the slip is enormous. This is because the peripheral partof the substrate 3 is less heated than the other part due to the thermalresistance at the interface between the substrate 3 and the member 10,and the substrate 3 inevitably has a non-uniform temperaturedistribution.

As is evident from FIG. 20, too, the slip is also prominent when thedifference ΔT is greater than 200° C. This is because the peripheralpart of the substrate 3 is excessively heated and more than the otherpart, despite of the thermal resistance at the interface between thesubstrate 3 and the member 10, and the substrate 3 inevitably has anon-uniform temperature distribution.

As can be understood from FIG. 20, the slip can be minimized by heatingthe annular wall 10f or 10g to a temperature 10° to 200° C. higher thanthat of the substrate 3, thereby imparting a more uniform temperaturedistribution to the substrate 3.

There are two methods of heating the inner edge of the member 10 to atemperature 10° to 200° C. higher than that of the substrate 3. Thefirst method is to control the temperatures of the center and peripheralparts of the holder 4 independently. The second method is set thedistance H1 (FIGS. 18 and 19) between the annular wall 10f or 10g andthe member 10 or the holder 4, at a specific ratio to the distance H2(FIGS. 18 and 19) between the holder 4 and the substrate 3.

The first method can be performed by means of the heating unitillustrated in FIG. 21. The heating unit comprises two heater coils 6aand 6b, two power supplies 8a and 8b connected to the coils 6a and 6b,respectively, and two temperature controllers 9a and 9b connected to thepower supplies 8a and 8b, respectively. The controllers 9a and 9b have aradiation thermometer each. The thermometers incorporated in thecontrollers 9a and 9b detect the temperatures ambient to the center andperipheral parts of the substrate 3, respectively. The controllers 9aand 9b controls the power supplies 8a and 8b and, hence, the heatercoils 6a and 6b, in accordance with the temperatures thus detected, suchthat the substrate 3 has a uniform surface-temperature distribution.

When the spaces between heater coils 6a and 6b are located correspondingto outermost portions of the substrate 3, as is shown in FIG. 21, thesubstrate-supporting member 10 can be controlled to a desiredtemperature, thereby enabling the substrate 3 to have a uniformtemperature distribution. The arrangement of the coils 6a and 6b is notlimited to this. If each of them is further divided, and the number ofspaces between the coils 6a and 6b and between divided portions of eachcoil is more than two, at least one of the spaces must be locatedcorresponding to outermost portions of the substrate 3 to obtain thesame effect.

Other types of heating units can be employed to perform the first methodof heating the annular wall 10f or 10g to a temperature 10° to 200° C.higher than that of the substrate 3. For example, thermocouples can beused, instead of thermometers, for directly detecting the temperature ofthat portion of the member 10 which contacts the substrate 3, thusmeasuring the temperature of the peripheral part of the substrate 3.Further, four or more heater coils can be used, instead of three,thereby to heat the substrate more uniformly. Still further, only oneheater coil can be used, which consists of portions, each having turnsarranged at a different pitch and exhibiting a different heat-generatingefficiency.

The second method of heating the annular wall 10f or 10g to atemperature 10° to 200° C. higher than that of the substrate 3 will nowbe explained in detail. To determine the most desirable ratio of thedistance H2 between the holder 4 and the member 10 to the distance H1 ofthe annular wall 10f or 10g and the member 10 or the holder 4, theinventors studied the the relation between the total-slip length L of asubstrate and the ratio, H2/H1, which was observed in thesubstrate-supporting units of the types shown in FIGS. 18 and 19 theyhave made for experimental use. This relation was as is shown in thegraph of FIG. 22, wherein the ratio H2/H1 is plotted on the X axis, andthe total-slip length L is plotted on the Y axis.

As can be understood from FIG. 22, the slip in the substrate 3 isenormous when the ratio H2/H1 is less than 2. This is because theperipheral part of the substrate 3 is less heated than the other partdue to the thermal resistance at the interface between the substrate 3and the member 10, and the substrate 3 inevitably has a non-uniformtemperature distribution. Further, as is evident from FIG. 22, the slipis great also when the ratio H2/H1 is greater than 20. This is becausethe peripheral part of the substrate 3 is heated excessively and morethan the other part, despite of the thermal resistance at the interfacebetween the substrate 3 and the member 10, and the substrate 3inevitably has a non-uniform temperature distribution.

Hence, as can be understood from FIG. 22, the slip in the substrate 3can be reduced to a minimum, by setting the ratio H2/H1 to a valueranging from 2 to 20, thereby to impart a uniform surface-temperaturedistribution to the substrate 3.

Although not shown in the drawings, the substrate-supporting unit ofFIG. 19 can be modified such that the annular wall 10g is more thick,extending over almost the entire lower surface of thesubstrate-supporting member 10.

As has been described, due to the thermal resistance at the interfacebetween the substrate 3 and the member 10, the peripheral part of thesubstrate 3 may be less heated than the other part, and the substrate 3may inevitably has a non-uniform temperature distribution. In this case,the substrate-supporting member 10, which is a thin member, also has anon-uniform temperature distribution and, hence, a thermal stress. Dueto this thermal stress, the member 10, which is thin, warps, inevitablychanging the distance between the substrate 3 and the holder 4 changes,and the surface-temperature distribution of the substrate 3 becomes evenless uniform.

FIG. 23 shows another type of a substrate-supporting unit according tothe invention, which is designed to prevent the member 10 from warpingin spite of the thermal stress. More specifically, this unit has anannular rib 10h integrally formed with the substrate-supporting member10 and extending downward from the peripheral edge thereof. The rib 10hmechanically reinforce the substrate-supporting member 10, thuspreventing the member 10 from warping.

FIG. 24 illustrates another type of a substrate-supporting unit,designed also to prevent the member 10 from warping in spite of thethermal stress. As is shown in FIG. 24, the member 10 consists of twoparts 10 which are made of the same material. Thus, the member 10, as awhole, is less likely to warp due to the thermal stress. In addition,owing to the thermal resistance at the joint between the parts 10j and10k, the temperature fall at the peripheral part of the substrate 3,which contacts the member 10, can be decreased.

FIG. 25 shows another substrate-supporting unit according to the presentinvention. This unit comprises a holder 4 and a substrate-supportingmember 10 located above the holder 4. The member 10 is a disc and has acenter hole 10a which has a shape similar to that of the substrate 3 andhas a diameter slightly less than that of the substrate 3. The substrate3 is supported by the member 10, with its peripheral part contacting themember 10. There are no gaps between the substrate 3 and the member 10,thus not allowing the feed gas flow into the space between the holder 4and the lower surface of the substrate 3. Hence, no layer will bedeposited on the lower surface of the substrate 3.

A fourth embodiment of the invention will be described, with referenceto FIGS. 26, 27 and 28. This embodiment is characterized by the use of asubstrate-supporting unit having a substrate-supporting member which ismade of material having low thermal conductivity, such as glass orceramics.

FIG. 26 illustrates a substrate-supporting unit for use in thevapor-phase deposition apparatus according to the fourth embodiment.This unit comprises a holder 4 and a substrate-supporting member 10formed on the holder 4. The member 10 is a disc made of glass orceramics and having a center hole 10a. The hole 10a has a diameterslightly less than that of the substrate 3. A stepped portion is formedat the inner edge of the member 10. Hence, the substrate 3 is supportedon the member 10, with its peripheral part resting on the steppedportion. Since the member 10 is made of glass or ceramics, either beingmaterial having low thermal conductivity, a minimum amount of heat isapplied from the holder 4 to the peripheral part of the substrate 3through the substrate-supporting member 10.

FIG. 27 shows a first modification of the unit shown in FIG. 26. Thismodification is identical to the unit of FIG. 26, except that an annularthin wall 10c with a pointed top is integrally formed on the steppedportion of the substrate-supporting member 10. Hence, the substrate 3 isset in line-contact with the substrate-supporting member 10. Thisreduces the cross-sectional area of the heat path extending from theholder 4 to the peripheral part of the substrate 3. Therefore, the heatdistribution in the substrate 3 is more uniform than in the case wherethe substrate 3 is supported by the unit illustrated in FIG. 26.

FIG. 28 is a plan view illustrating a second modification of thesubstrate-supporting member shown in FIG. 26. This modificationcomprises three blocks 10 made of glass or ceramics, instead of onering-shaped member 10 shown in FIG. 26. Obviously, the totalcross-sectional area of these blocks 10 is far smaller than that of thesingle member 10 (FIG. 26), and the heat distribution in the substrate 3is more uniform than when the substrate 3 is supported by the unit ofFIG. 26.

A fifth embodiment of the invention will now be described, withreference to FIGS. 29, 30A and 30B. The fifth embodiment ischaracterized by the measures taken to heat a substrate 3 uniformly evenif the substrate warps.

The results of the experiments repeated by the inventors show thatsubstrates warp at a curvature ranging from about 10 mR to about 100 mR,depending on the temperature to which the substrates are heated and alsothe emissibility which the substrates have. The fifth embodiment of theinvention is designed based on this finding.

FIG. 29 shows a substrate holder 4 for use in the vapor-phase depositionapparatus according to the fifth embodiment of the invention. As isevident from FIG. 29, the holder 4 has a circular recess 20 having aconcave bottom. The concave bottom has a curvature within a range fromabout 10 mR to about 100 mR. Hence, when the substrate 3 placed on theholder 4 warps at a curvature falling in the same range, the gap betweenthe substrate 3 and the bottom of the recess 20 is uniform. As a resultof this, the same amount of heat is applied from the bottom of therecess 20 to any part of the substrate, whereby the substrate 3 has auniform surface-temperature distribution, all the time a crystal layeris formed on the substrate 3 by means of vapor-phase deposition.

FIGS. 30A and 30B illustrate another type of a substrate holder 4 foruse in the vapor-phase deposition apparatus according to the fifthembodiment. This holder 4 has a circular recess 20 having a flat bottom.It also has a vertical through hole 4d made in the bottom of the recess20, and a horizontal through hole 4e opening at the periphery of therecess 20. The hole 4d is connected by a pipe 18 to a secondgas-supplying unit 19. Gas, such as N₂, which has lower thermalconductivity than the carrier gas is supplied from the unit 19 into therecess 20 through the vertical hole 4d. (Note: The thermal conductivityof N₂ is about ten times lower than that of the carrier gas such as H₂.)The gas thus introduced into the recess 20 can be exhausted therefromthrough the horizontal through hole 4e. The substrate holder 4 is madeof carbon, and has a high heat-emissibility.

Since the gas filled in the recess 20 has low thermal conductivity, itscarcely conducts heat to the substrate 3 from the bottom of the recess20. Hence, the heat radiated from the bottom of the recess 20predominantly heats the substrate. Even if the substrate 3 warps as isshown in FIG. 30B, the amount of heat radiated to a part of thesubstrate 3 is almost the same as that of heat radiated to any otherpart of the substrate 3, regardless of the distance between thesubstrate 3 and the bottom of the recess 20. Therefore, the substrate 3has a uniform surface-temperature distribution.

The advantage of using the substrate-supporting unit of FIGS. 30A and30B can also be well understood from the graph of FIG. 2, which revealsthat the temperature of the substrate 3 greatly changes with thedistance D when the distance D between the substrate 3 and the holder 4is equal to or less than 1 mm, but changes very little when the distanceD is greater than 1 mm, owing to the gas scarcely conducting heat to thesubstrate 3 from the holder 4.

FIG. 31 shows a modification of the substrate holder illustrated inFIGS. 30A and 30B. This modification is identical to the holder of FIGS.30A and 30B, except that there are no horizontal through holes. The gassupplied from the second gas-supplying unit 19 into the recess 20through the pipe 18 is purged from the recess 20 through the gap betweenthe peripheral part of the substrate 3 and the stepped portion of thesubstrate holder 4.

No matter in which holder, the one shown in FIGS. 30A and 30B or the oneshown in FIG. 31, the gas supplied into the recess 20 cannot only be N₂,but also an inert gas (e.g., argon, xenon or helium), CF₄, CO₂, orhalogen gas. Whichever one of these gases is used, the same advantagewill be obtained.

Moreover, in the holder shown in FIGS. 30A and 30B or the holder shownin FIG. 31, the carrier gas or the gas having lower thermal conductivitycan be supplied into the recess 20 through the hole 4d or 4c and thenpurged through the horizontal hole 4e or through the gap between theperipheral part of the substrate 3 and the stepped portion of the holder4. In this case, the feed gas cannot flow into the recess 20 throughsaid gap, to alter the amount of heat applied to the substrate 3 fromthe holder 4 or to form a crystal layer on the lower surface of thesubstrate 3.

FIGS. 32 to 34 illustrate the modifications of the substrate holdersillustrated in FIGS. 29, 30A, 30B, and 31. These modified substrateholders are identical to those of FIGS. 29, 30A, 30B, and 31, exceptthat the recess 20 horizontally extends into the peripheral portion ofthe holder 4 and, therefore, has a greater diameter than the substrate3. Since the heat path formed of the peripheral portion of the holder 4has a smaller cross-sectional area, the substrate 3 will have asurface-temperature distribution more uniform than in the case where itis supported by the holders illustrated in FIGS. 29, 30A, 30B, and 31.

A sixth embodiment of the invention will now be described, withreference to FIGS. 35 and 36. The vapor-phase deposition apparatusaccording to the fifth embodiment is characterized in that no supportsprotrude from the holder 4, for supporting the substrate-supportingmember 10. More specifically, as is shown in FIG. 35, the member 10 isheld horizontally within the reaction vessel 2 by means of a support 13which horizontally extends from the inner periphery of the vessel 2.

FIG. 36 illustrates a modification of the vapor-phase depositionapparatus shown in FIG. 35. The modified apparatus is identical to theapparatus of FIG. 35, except that the substrate-supporting member 10 issupported by a support 13 which is secured to a rotatable, verticalhollow cylinder 5. Alternatively, the member 10 can be supported by asupport (not shown) which protrude upwards from a base plate 1.

In the vapor-phase deposition apparatus of FIG. 35 or FIG. 36, no heatis conducted to the substrate 3 directly from the substrate holder 4.This helps to heat the substrate 3 uniformly; the peripheral part of thesubstrate 3 is heated to the same temperature as any other part.

FIG. 37 shows a modified reaction vessel 2 for a component of thevapor-phase deposition apparatus according to this invention. Thisvessel 2 is characterized in that its inner surface 2a is polished to adegree close to mirror-polish degree, thus having a small roughness. Theinner surface 2a, therefore, has a low heat-emissibility. Due to the lowheat-emissibility, the substrate 3 can have a uniformsurface-temperature distribution.

Alternatively, the reaction vessel 2 can be made of material which has alow heat-emissibility, or the inner surface 2a of the vessel 2 can becoated with a layer of material having a low heat-emissibility. Ineither case, the substrate 3 can have a uniform surface-temperaturedistribution.

All embodiments described above are vapor-phase deposition apparatusesof the type, in which only one substrate 3 is supported within theso-called vertical reaction vessel 2. Nevertheless, the presentinvention can be applied to any other type of a vapor-depositionapparatus. vapor-phase deposition apparatuses of other types, accordingto the invention, will now be described with reference to FIGS. 38 to42.

FIG. 38 illustrates a so-called "barrel-type" vapor-phase depositionapparatus according to the invention. This apparatus is characterized bythe use of a substrate holder 4 which is a truncated pyramid. Four setsof support posts 11 are provided on the four sides of the holder 4,respectively; the posts 11 of each set protrude from one side of thesubstrate holder 4. Four substrate-supporting members 10 are supportedby the four sets of posts 11, respectively, and located above the foursides of the holder 4, respectively. Hence, four substrates 3 can besimultaneously processed within a reaction vessel 2.

FIG. 39 illustrates a so-called horizontal vapor-deposition apparatusaccording to the invention. The feed gas and the carrier gas aresupplied into a reaction vessel 2 through a gas-inlet port 2a, and flowthrough the vessel horizontally to the right (FIG. 39).

FIG. 40 shows a modification of the substrate-supporting member 10incorporated in the horizontal vapor-phase deposition apparatusillustrated in FIG. 39. The modified member 10 is designed to support aplurality of substrates 3.

FIGS. 41 and 42 are schematic views of a vapor-phase depositionapparatus according to the invention, and explain how to transfer asubstrate into, and out of, the reaction vessel 2 of the apparatus. Asis shown in FIGS. 40 and 41, a substrate holder 4 is connected to theupper end of a shaft 5. Mounted on the holder 4 is asubstrate-supporting member 10 which supports a substrate 3. The shaft 5extends downwards through bellows 30 secured to the lower end of thevessel 2 in airtight fashion. The shaft 5 is coupled, at its lower end,to a drive unit 31. The drive unit 31 moves the shaft 5 up and down.

A chamber 33 is located beside the reaction vessel 2 and connectedthereto by means of a gate valve 32. A substrate tray 34 is provided inthe chamber 33. The tray 34 is connected by a connection rod 36 to atray-transferring unit 37. The unit 37 moves the rod 36 back and forth,in the directions of arrows A. Hence, the substrate tray 34 ishorizontally moved, back and forth through the chamber 33, and into andout of the reaction vessel 2 through the gate valve 32.

In operation, the member 10 supporting a substrate 3 is placed on thesubstrate tray 34. Then, the tray-transferring unit 37 is operated,thereby transferring the tray 34 into the reaction vessel 2 through thegate valve 32. Next, the member 10 is moved from the tray 34 onto theholder 4 which has been lowered to the bottom of the reaction vessel 2.Then, the unit 37 is operated, transferring the tray 34, now empty, fromthe vessel 2 to the chamber 33 through the gate valve 32. Thereafter,the drive unit 31 is operated, thus moving the shaft 5 upwards, and somoving the substrate holder 4. As a result of this, thesubstrate-supporting member 10 is moved up to a predetermined levelwithin the reaction vessel 2, and the substrate 3 is subjected tovapor-phase deposition. Upon completion of the deposition, the driveunit 31 is operated, lowering the shaft 5. Hence, the holder 4, themember 10, and the substrate 3 are moved downwards altogether. Thetray-transferring unit 37 is operated, transferring the tray 34 into thereaction vessel 2 through the gate valve 32. The member 10 is moved fromthe holder 4 onto the tray 34. The unit 37 is further operated, thustransferring the tray 34, now supporting the member 10 and, hence, theprocessed substrate 3, from the vessel 2 into the chamber 33 through thegate valve 32.

The chamber 33 has an opening made in the top, which is closed by acover 39. An O-ring 38 is interposed between the cover 39 and the top ofthe chamber 33. The chamber 33 has an exhaust port 33a made in thebottom. Through this port 33, the unreacted gas is discharged from thechamber 33 in a controlled amount, whereby the pressure in the chamber33 is adjusted to the best possible value.

In the vapor-phase deposition apparatus shown in FIGS. 41 and 42, thesubstrate 3 can be transferred into and out of the reaction vessel 2,while supported by the member 10. In other words, the substrate 3 neednot be mounted onto or removed from the member 10. This helps to enhancethe efficiency of vapor-phase deposition.

The present invention is not limited to the embodiments andmodifications--all described above. Needless to say, various changes andother modifications can be made, without departing from the spirit andscope of the present invention.

What is claimed is:
 1. A vapor-phase deposition apparatus comprising:anannular substrate-supporting member having a supporting portion whichholds a peripheral part of a substrate; a plate-shaped substrate holderfor holding said substrate-supporting member, said plate-shapedsubstrate holder being disposed opposite to said substrate; heatingmeans for heating said plate-shaped substrate holder; and protrusionsprotruding from one of said substrate-supporting member and saidsubstrate holder so that a distance between said substrate holder andsaid supporting portion of said substrate-supporting member is not morethan a distance between said substrate holder and a portion of saidsubstrate-supporting member other than said supporting portion; wherein,by maintaining said supporting portion of said substrate-supportingmember at a higher temperature than said portion of saidsubstrate-supporting member other than said supporting portion by meansof said protrusions, a surface temperature distribution is uniform insaid substrate.
 2. The vapor-phase deposition apparatus according toclaim 1, wherein said protrusions have a height determined such that arate (H2/H1) of a distance (H1) between said substrate holder and saidsupporting portion of said substrate-supporting member to a distance(H2) between said substrate holder and said substrate is set within arange of 2 to
 20. 3. The vapor-phase deposition apparatus according toclaim 1, wherein said protrusions are set at a temperature which is 10°to 200° C. higher than that of said substrate.
 4. The apparatusaccording to claim 1, further comprising temperature-controlling meansfor controlling a temperature of said supporting portion which holds theperipheral part of the substrate, independently of a temperature of thesubstrate.
 5. The apparatus according to claim 1, further comprisingheating means having divided portions, wherein at least one spacebetween the divided portions is located to correspond to an outermostportion of the substrate.